SI1016X

Si1016X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.70 at VGS = 4.5 V N-Channel 20 0.85 at VGS = 2.5 V 1.25 at VGS = 1.8 V 1.2 at VGS = - 4.5 V P-Channel - 20 1.6 at VGS = - 2.5 V 2.7 at VGS = - 1.8 V ID (mA) 600 500 350 - 400 - 300 - 150 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFETs 2000 V ESD Protection Very Small Footprint High-Side Switching Low On-Resistance: N-Channel, 0.7  P-Channel, 1.2  Low Threshold: ± 0.8 V (Typ.) Fast Switching Speed: 14 ns 1.8 V Operation Compliant to RoHS Directive 2002/95/EC SOT-563 SC-89 S1 1 6 D1 G1 2 5 G2 Marking Code: A D2 3 4 S2 Top View BENEFITS Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS Replace Digital Transistor, Level-Shifter Battery Operated Systems Power Supply Converter Circuits Ordering Information: Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) N-Channel P-Channel Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 - 20 Gate-Source Voltage VGS ±6 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb TA = 25 °C TA = 85 °C Continuous Source Current (Diode Conduction)a ID IDM IS 515 485 370 350 650 450 380 - 390 - 280 - 450 - 370 - 265 - 650 - 380 Maximum Power Dissi...