Product Description
Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed ...
Product Description
Sirenza Microdevices’ SHF-0589 is a high performance AlGaAs/ GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown
voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity. Output power at 1dB compression is +33.4 dBm when biased for Class AB operation at 7V,345mA at 1.96 GHz. The +46.5 dBm third order intercept makes it ideal for high dynamic range, high intercept point requirements. It is well suited for use in both analog and digital wireless communication infrastructure and subscriber equipment including 3G, cellular, PCS, fixed wireless, and pager systems. Typical Gain Performance (7V,345mA)
SHF-0589
0
Symbol
1
D evice C haracteristics
D E
(unless otherw ise noted)
Test C onditions, 25C VDS=7V, IDQ=345mA
D
Frequency (GHz)
2
3
4
5
6
FO
40 35 30 25 20 15 10 5 0
Gain, Gmax (dB)
Gmax Gain
Applications Analog and Digital Wireless Systems 3G, Cellular, PCS Fixed Wireless, Pager Systems
R
Test Frequency 0.90 GHz 1.96 GHz 2.14 GHz 0.90 GHz 1.96 GHz 1.96 GHz 1.96 GHz 1.96 GHz 1.96 GHz
N
E
High Drain Efficiency (>50% at P1dB)
W
U nits dB dB dB dB dB m dB m dB m dB m dB mA mS V V V
o
+33.4 dBm P1dB +46.5 dBm OIP3 +26 dBm IS-95 Channel Power +11.5 dB Gain +23.7 dBm W-CDMA Channel Power
D E
Min 14.1 10.3 44 31.9 816 576 -3.0 3.7 -17 -22 23 -
S
Typ 22.9 17.4 16.6 15.7 11.5 46.5 33.4 26.2 Max 17.3 12.7 1536 1008 -1.0 -15 ...
