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SGM2016P Datasheet

Part Number SGM2016P
Manufacturers Sony Corporation
Logo Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Datasheet SGM2016P DatasheetSGM2016P Datasheet (PDF)

For the availability of this product, please contact the sales office. .

  SGM2016P   SGM2016P






Part Number SGM2016M
Manufacturers Sony Corporation
Logo Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Datasheet SGM2016P DatasheetSGM2016M Datasheet (PDF)

For the availability of this product, please contact the sales office. .

  SGM2016P   SGM2016P







Part Number SGM2016AP
Manufacturers Sony Corporation
Logo Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Datasheet SGM2016P DatasheetSGM2016AP Datasheet (PDF)

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate prote.

  SGM2016P   SGM2016P







Part Number SGM2016AN
Manufacturers Sony Corporation
Logo Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Datasheet SGM2016P DatasheetSGM2016AN Datasheet (PDF)

SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Bui.

  SGM2016P   SGM2016P







Part Number SGM2016AM
Manufacturers Sony Corporation
Logo Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Datasheet SGM2016P DatasheetSGM2016AM Datasheet (PDF)

SGM2016AM/AP GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AM/AP is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.) at 900MHz • High stability • Built-in gate prote.

  SGM2016P   SGM2016P







GaAs N-channel Dual-Gate MES FET

For the availability of this product, please contact the sales office. .


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