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SGM2014AM
Part Number
SGM2014AM
Manufacturer
Sony Corporation
Description
GaAs
N-channel
Dual-Gate MES FET
Published
Apr 8, 2005
Datasheet
SGM2014AM
PDF File
Features
• Low
voltage
operation
• Low noise: NF = 1.5dB (typ.) at 900MHz
• High gain: Ga = 18dB (typ.) at 900MHz
• Low cross-modulation
• High stability
• Built-in gate-protection diode Application UHF band
amplifier
, mixer and oscillator Structure GaAs N-ch...
Similar Datasheet
SGM2014AN
GaAs N-channel Dual-Gate MES FET
(Sony Corporation)
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