SGM2013N

SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features Ultra-small package Low voltage operation Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz High stability Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) Drain to source voltage VDSX 6 Gate 1 to source voltage VG1S –4 Gate 2 to source voltage VG2S –4 Drain current ID 18 Allowable power dissipation PD 100 Channel temperature Tch 125 Storage temperature Tstg –55 to +150 M-281 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E97144-PS SGM2013N Electrical Characteristics Item Gate 1 to source current Symbol IG1SS Conditions VG1S = –3V VG2S = 0V VDS = 0V VG...