Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary ...
Ordering number : ENN*0000
SGF9
N-Channel GaAs MESFET
SGF9
For C to X-band Local Oscillator and Amplifier
Preliminary Features
Package Dimensions
unit : mm 0000
[SGF9]
3
Mold package-owing to the cross-mold technology, this product can maintain the same performance as the ceramic package. The chip surface is covered with the highly reliable protection film. Automatic surface mounting is available.
.05 ±0 1.8
0.5 ±0.05
2
1.8 ±0 .05
2
1 0.4
+0.1 0.1 --0.015
±0.02
0 to 0.1
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current Allowable Power Dissipation Junction Temperature Storage Temperature Symbol VDS VGS ID PD Tj Tstg Conditions
4.1 ±0.1
1 : Drain 2 : Source 3 : Gate
Ratings 6.0 --5.0 100 130 150 --55 to +150
+0.15 0.8 --0.05
(0.9 ±0.05)
Unit V V mA mW °C °C
Electrical Characteristics at Ta=25°C
Parameter Gate-to-Source Leak Current Saturated Drain Current Gate-to-Source Cutoff
Voltage Forward Transfer Admittance Symbol V(BR)GSO IDSS VGS(off) yfs Conditions IGS=--10µA VDS=3V, VGS=0 VDS=3V, ID=100µA VDS=3V, ID=10mA Ratings min --5.0 30 --0.5 20 35 40 70 --5.0 typ max Unit V mA V mS
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably ex...
