SGF25

Ordering number : EN5820 N-Channel GaAs MESFET SGF25 For C- to X-band local oscillator and amplifier Features Package Dimensions Super miniaturized plastic-mold package(CP4). unit: mm High reliability achieved by original manufacturing 2134A technology(adopting a protection coat). Available for surface mounting and automatic inserting. [SGF25] 1 : Gate 2 : Source 3 : Drain 4 : Source SANYO: CP4 Absolute Maximum Ratings at Ta=25°C Parameter Drain to source voltage Gate to source voltage Drain current Dissipation power Junction temperature Storage temperature Symbol VDS VGS ID PD Tj Tstg Conditions Ratings 6.0 –5.0 100 200 150 –55 to +150 Unit V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Gate to source breakdown voltage Zero gate voltage drain current Gate to source cutoff voltage Forward transfer admittance Minimum noise figure Associated gain Maximum available gain Symbol V(BR)GSO IDSS VGS(off) |Yfs| NFmin Ga MAG Conditions IGS=–10µA VDS=3V, VGS=0 VDS=3V, ID=100µA VDS=3V, ID=10mA VDS=3V, ID=10mA f=12GHz Ratings min –5.0 30 –0.5 typ 45 –1.5 40 2.5 5.5 7.0 max 65 –3.0 Unit V mA V mS dB dB dB SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN O2097GI (KOTO) TA-1290 No.5820-1/3 SGF25 Vds=3V, Ids=10mA SGF25 Frequency (MHz) 3000.0000 4000.0000 5000.0000 6000.0000 7000.0000 8000.0000 9000.0000 10000.0000 11000.0000 12000.0000 13000.0000 14000.0000 15000.0000 S11 MA...