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SG45N12T

Sirectifier Semiconductors

Discrete IGBTs

SG45N12T Discrete IGBTs Dimensions TO-247AD www.datasheet4u.com Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15...


Sirectifier Semiconductors

SG45N12T

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SG45N12T Discrete IGBTs Dimensions TO-247AD www.datasheet4u.com Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG45N12T Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC; limited by leads TC=90oC TC=25oC, 1 ms Maximum Ratings 1200 1200 ±20 ±30 75 45 180 ICM=90 @ 0.8 VCES 300 -55...+150 150 -55...+150 Unit V V A A W o VGE=15V; TVJ=125oC; RG=5 (RBSOA) Clamped inductive load PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Maximum Tab temperature for soldering SMD devices for 10s Md Weight Mounting torque (M3) C 300 260 1.13/10 6 o C C o Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) IC=1mA; VGE=0V IC=750uA; VCE=VGE VCE=VCES; VGE=0V; TJ=25 C TJ=125 C o o Test Conditions Characteristic Values min. 1200 2.5 5.0 250 2 ±100 2.5 typ. max. Unit V V uA mA nA V VCE=0V; VGE=±20V IC=IC90; VGE=15V SG45N12T Discrete IGBTs (TJ=25oC, unless otherwise specified) www.datasheet4u.com Symbol Test Conditions Characteristic Values min. typ. 44 max. ...




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