Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.206 Ω (Typ.)
1
SFW/I9Z24
BVDSS = -60 V RDS(on) = 0.28 Ω ID = -9.7 A
D2-PAK
2
o
I2-PAK...
