Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.)
1
SFW/I9Z14
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A
D2-PAK
2
o
I2-PAK
...
