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SFWI9614 Datasheet

Part Number SFWI9614
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFWI9614 DatasheetSFWI9614 Datasheet (PDF)

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.) 1 SFW/I9614 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.6 A D2-PAK 2 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (T.

  SFWI9614   SFWI9614






Part Number SFWI9610
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Advanced Power MOSFET
Datasheet SFWI9614 DatasheetSFWI9610 Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Low RDS(ON) : 2.084 Ω (Typ.) 1 SFW/I9610 BVDSS = -200 V RDS(on) = 3.0 Ω ID = -1.75 A D2-PAK 2 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Con.

  SFWI9614   SFWI9614







Advanced Power MOSFET

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.) 1 SFW/I9614 BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1.6 A D2-PAK 2 I2-PAK 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * o o Value -250 -1.6 -1.0 1 O Units V A A V mJ A mJ V/ns W W W/ C o -6.5 + _ 30 112 -1.6 2.0 -4.8 3.1 20 0.16 - 55 to +150 O 1 O 1 O 3 O 2 Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“ from case for 5-seconds o TJ , TSTG TL o C 300 Thermal Resistance Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 6.25 40 62.5 o Units C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B1 2001 Fairchild Semiconductor Corporation SFW/I9614 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Volt.


2005-05-20 : SF4-DC48V    SF4-DC5V    SF4-DC60V    SF4-DC9V    SF4001    SF4002    SF4003    SF4004    SF4005    SF4006   


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