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SFWI2955

Fairchild Semiconductor
Part Number SFWI2955
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published May 20, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File SFWI2955 PDF File

SFWI2955
SFWI2955

Overview
... Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = -60V Low RDS(ON) : 0.
22 Ω (Typ.
) 1 SFW/I2955 BVDSS = -60 V RDS(on) = 0.
3Ω ID = -9.
4 A D2-PAK 2 o I2-PAK 1 3 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * 2 O 1 O 1 O 3 O o o Value -60 -9.
4 -6.
6 1 O Units V A A V mJ A mJ V/ns W W...


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