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SFW12955
Advanced Power MOSFET
Description
Advanced Power
MOSFET
FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ.) 1 SFW/I2955 BVDSS = -60 V RDS(on) = 0.3Ω ID = -9.4 A D2-PAK 2 o I2-PAK 1 3 2 3 1. Gate ...
Fairchild Semiconductor
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