SFR9230B / SFU9230B
SFR9230B / SFU9230B
200V P-Channel MOSFET
General Description
These P-Channel enhancement mode powe...
SFR9230B / SFU9230B
SFR9230B / SFU9230B
200V P-Channel
MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
Features
-5.4A, -200V, RDS(on) = 0.8Ω @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability
S D G!
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▶ ▲
G
S
D-PAK
SFR Series
I-PAK
G D S
SFU Series
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D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source
Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
SFR9230B / SFU9230B -200 -5.4 -3.4 -22 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
390 -5.4 4.9 -5.5 2.5 49 0.39 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
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