Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Advanced Power
MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n 175 C Operating Temperature n Lower Leakage Current : 10 µA (Max.) @ VDS = -60V n Low RDS(ON) : 0.362 Ω (Typ.)
1
SFW/I9Z14
BVDSS = -60 V RDS(on) = 0.5 Ω ID = -6.7 A
D2-PAK
2
o
I2-PAK
1 3 2 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * o o
Value -60 -6.7 -4.7
1 O 2 O 1 O 1 O 3 O
o
Units V A A V mJ A mJ V/ns W W W/ C
o
-27 ±30 115 -6.7 3.8 -5.5 3.8 38 0.25 - 55 to +175
Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
TJ , TSTG TL
o
C
300
Thermal Resistance
Symbol RθJC RθJA RθJA Characteristic Junction-to-Case Junction-to-Ambient * Junction-to-Ambient Typ. ---Max. 3.95 40 62.5
o
Units C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. C
SFW/I9Z14
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs ...
