SFP2955

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175 C Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 µA (Max.) @ VDS = -60V Low RDS(ON) : 0.22 Ω (Typ.) 1 2 3 SFP2955 BVDSS = -60 V RDS(on) = 0.3 Ω ID = -9.4 A TO-220 o 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o o o Value -60 -9.4 -6.6 1 O Units V A A V mJ A mJ V/ns W W/ C o -38 + _ 20 151 -9.4 4.9 -5.5 49 0.33 - 55 to +175 O 1 O 1 O 3 O 2 o C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.5 -Max. 3.06 -62.5 o Units C/W Rev. B ©1999 Fairchild Semiconductor Corporation SFP2955 Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Reverse Drain-...