Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! ...
Advanced Power
MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -200V ! Lower RDS(ON) : 2.25 Ω (Typ.)
SFM9210
BVDSS = -200 V RDS(on) = 3.0 Ω ID = -0.5 A
SOT-223
2
1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * Linear Derating Factor * 2 O 1 O 1 O 3 O o o
Value -200 -0.5 -0.3
1 O
Units V A A V mJ A mJ V/ns W W/ C
o
-4.0 + _ 30 133 -0.5 0.16 -5.0 1.63 0.013 - 55 to +150
Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds
o
C
300
Thermal Resistance
Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 77 Units
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. A
SFM9210
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown
Voltage Breakdown
Voltage Temp. Coeff. Gate Threshold
Voltage Gate-Source Leakage , Forward Gate...
