SFM9014

Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ! Lower RDS(ON) : 0.362 Ω (Typ.) SFM9014 BVDSS = -60 V RDS(on) = 0.5 Ω ID = -1.8 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt o Total Power Dissipation (TA=25 C) * Linear Derating Factor * o o Value -60 -1.8 -1.1 1 O 2 O 1 O 1 O 3 O Units V A A V mJ A mJ V/ns W W/ C o -14 ±!" 110 -1.8 0.28 -5.5 2.8 0.022 - 55 to +150 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds o C 300 Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 45 Units o C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B SFM9014 Electrical Characteristics (TC=25oC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source...