Advanced Power MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! ...
Advanced Power
MOSFET
FEATURES
! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ! Lower RDS(ON) : 0.549 Ω (Typ.)
SFH9244
BVDSS = -250 V RDS(on) = 0.8 Ω ID = -8.7 A
TO-3P
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source
Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source
Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8 “ from case for 5-seconds
o o o
Value -250 -8.7 -6.0
1 O
Units V A A V mJ A mJ V/ns W W/ C
o
-35 + _ 30 473 -8.7 12.6 -4.8 126 1.0 - 55 to +150
O 1 O 1 O 3 O
2
o
C
300
Thermal Resistance
Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 1.0 -40
o
Units
C/W
Rev. A
SFH9244
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown
Voltage Breakdown
Voltage Temp. Coeff. Gate Threshold
Voltage Gate-Source Leakage , Forward Gate-Source Leakage , Rever...