SFH9154

Advanced Power MOSFET FEATURES s Avalanche Rugged Technology s Rugged Gate Oxide Technology s Lower Input Capacitance s Improved Gate Charge s Extended Safe Operating Area s 150 C Operating Temperature s Lower Leakage Current : 10 µA (Max.) @ VDS = -150V s Lower RDS(ON) : 0.140 Ω (Typ.) o SFH9154 BVDSS = -150 V RDS(on) = 0.2 Ω ID = -18 A TO-3P 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 C) Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8＂ from case for 5-seconds o o o Value -150 -18 -11.5 ① Units V A A V mJ A mJ V/ns W W/ C o -72 ±30 1215 -18 20.4 -5.0 204 1.63 - 55 to +150 ② ① ① ③ o C 300 Thermal Resistance Symbol RθJC RθCS RθJA Characteristic Junction-to-Case Case-to-Sink Junction-to-Ambient Typ. -0.24 -Max. 0.61 -40 o Units C/W 1 SFH9154 Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol BVDSS ΔBV/ΔTJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Le...