SF8GZ47,SF8JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive P...
SF8GZ47,SF8JZ47
TOSHIBA THYRISITOR SILICON PLANAR TYPE
SF8GZ47,SF8JZ47
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak off−State
Voltage Repetitive Peak Reverse
Voltage l Average On−State Current l Isolation
Voltage : VDRM = 400, 600V : VRRM = 400, 600V : IT (AV) = 8A : VIsol = 1500V AC Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State
Voltage and Repetitive Peak6 Reverse
Voltage Non−Repetitive Peak Reverse
Voltage (Non−Repetitive <5ms, Tj = 0~125°C) SF8GZ47 SF8JZ47 SF8GZ47 SF8JZ47 VRSM SYMBOL VDRM VRRM RATING 400 600 500 720 8 12.6 120 (50 Hz) 132 (60 Hz) 72 100 5 0.5 10 −5 2 −40~125 −40~125 1500 V V UNIT
Average On−State Current (Half Sine Waveform Tc = 72°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note 1) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate
Voltage Peak Reverse Gate
Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation
Voltage (AC, t = 1 min.)
2
IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VISOL
2
A A A A s A / µs W W V V A °C °C V
2
JEDEC JEITA TOSHIBA Weight: 1.7g
― ― 13−10H1B
Note 1: di / dt test condition, VDRM = 0.5 × Rated, ITM ≤ 25A, tgw ≥ 10µs, tgr ≤ 250ns, igp = IGT × 2.0
1
2001-07-13
SF8GZ47,SF8JZ47
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Vol...