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SF5J41A

Toshiba Semiconductor

TOSHIBA THYRISTOR SILICON PLANAR TYPE

SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A,SF5J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm l Rep...


Toshiba Semiconductor

SF5J41A

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SF5G41A,SF5J41A TOSHIBA THYRISTOR SILICON PLANAR TYPE SF5G41A,SF5J41A MEDIUM POWER CONTROL APPLICATIONS Unit: mm l Repetitive Peak Off−State Voltage : VDRM = 400, 600V Repetitive Peak Reverse Voltage : VRRM = 400, 600V l Average On−State Current l Gate Trigger Current : IT (AV) = 5A : IGT = 15mA (MAX.) MAXIMUM RATINGS CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage Non−Repetitive Peak Reverse Voltage (Non−Repetitive<5ms, Tj = 0~125°C) SF5G41A SF5J41A SF5G41A VRSM SF5J41A IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg 2 SYMBOL VDRM VRRM RATING 400 600 500 720 5 7.8 80 (50Hz) 88 (60Hz) 32 100 5 0.5 10 −5 2 −40~125 −40~125 UNIT V V Average On−State Current (Half Sine Waveform Tc = 91°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range 2 A A A A s A / µs W W V V A °C °C 2 JEDEC JEITA TOSHIBA Weight: 2g TO−220AB ― 13−10G1B 1 2001-07-13 SF5G41A,SF5J41A ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Critical Rate of Rise of Off−State Voltage Holding Current Latching Current Thermal ...




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