SF25GZ51,SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51,SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
l Repetitiv...
SF25GZ51,SF25JZ51
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF25GZ51,SF25JZ51
MEDIUM POWER CONTROL APPLICATIONS
l Repetitive Peak Off−State
Voltage : VDRM = 400, 600 V Repetitive Peak Reverse
Voltage : VRRM = 400, 600 V l Average On−State Current l Isolation
Voltage : IT (AV) = 25 A : VIsol = 1500 V AC Unit in mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State
Voltage and Repetitive Peak Reverse
Voltage Non−Repetitive Peak Reverse
Voltage (Non−Repetitive < 5 ms, Tj = 0~125°C) Average On−State Current (Half Sine Waveform) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non−Repetitive) I t Limit Value Critical Rate of Rise of On−State Current (Note) Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate
Voltage Peak Reverse Gate
Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range Isolation
Voltage (AC, t = 1 min.)
2
SYMBOL VDRM VRRM
RATING 400
UNIT
SF25GZ51 SF25JZ51 SF25GZ51
V 600 500
VRSM SF25JZ51 IT (AV) IT (RMS) ITSM I t di / dt PGM PG (AV) VFGM VRGM IGM Tj Tstg VIsol
2
V 720 25 39 350 (50 Hz) 385 (60 Hz) 612 100 5 0.5 10 -5 2 -40~125 -40~125 1500 A A A A s A / µs W W V V A °C °C V
2
JEDEC EIAJ TOSHIBA Weight : 5.9g
― ― 13−16A1B
Note :
di / dt Test Condition, iG = 30mA, tgw = 10µs, tgr ≤ 250ns
1
2001-05-10
SF25GZ51,SF25JZ51
ELECTRICAL CHARACTERISTICS (Ta
CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State
Voltage Gate Trigger
Voltage Gate Trigg...