SF0R5G43,SF0R5J43
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Plastic Mold Type. : IT (AV) = 500mA Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage (RGK = 1kΩ) Non−Repetitive Peak Reverse Voltage (Non-Repetitive < 5ms, RGK = 1kΩ, Tj = 0~110°C) SF0.
THYRISTOR
SF0R5G43,SF0R5J43
TOSHIBA THYRISTOR SILICON PLANAR TYPE
SF0R5G43,SF0R5J43
LOW POWER SWITCHING AND CONTROL APPLICATIONS
l Repetitive Peak Off−State Voltage : VDRM = 400,600V Repetitive Peak Reverse Voltage : VRRM = 400,600V l Average On−State Current l Plastic Mold Type. : IT (AV) = 500mA Unit: mm
MAXIMUM RATINGS
CHARACTERISTIC Repetitive Peak Off−State Voltage and Repetitive Peak Reverse Voltage (RGK = 1kΩ) Non−Repetitive Peak Reverse Voltage (Non-Repetitive < 5ms, RGK = 1kΩ, Tj = 0~110°C) SF0R5G43 SF0R5J43 SF0R5G43 SF0R5J43 VRSM VDRM VRRM SYMBOL RATING 400 600 500 720 V V UNIT
Average On−State Current (Half Sine Waveform Tc = 30°C) R.M.S On−State Current Peak One Cycle Surge On−State Current (Non-Repetitive) I t Limit Value Peak Gate Power Dissipation Average Gate Power Dissipation Peak Forward Gate Voltage Peak Reverse Gate Voltage Peak Forward Gate Current Junction Temperature Storage Temperature Range
2
IT (AV) IT (RMS) ITSM I t PGM PG (AV) VFGM VRGM IGM Tj Tstg
2
500 800 7 (50Hz) 8 (60Hz) 0.25 1 0.01 8 −5 500 −65~125 −65~125
mA mA A A s W W V V mA °C °C
2
JEDEC JEITA TOSHIBA Weight: 0.2g
TO−92 SC−43 13−5A1D
Note:
Should be used with gate resistance as follows.
1
2001-07-10
SF0R5G43,SF0R5J43
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Repetitive Peak Off−State Current and Repetitive Peak Reverse Current Peak On−State Voltage Gate Trigger Voltage Gate Trigger Current Gate Non−Trigger Voltage Holding Current Thermal Resistance SYMBOL IDRM IRRM VTM VGT.