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SEMH11 Datasheet

Part Number SEMH11
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Digital Transistor Array Preliminary data
Datasheet SEMH11 DatasheetSEMH11 Datasheet (PDF)

SEMH11 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ, R2 =10kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH11 Maximum Ratings Parameter Marking WC Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 .

  SEMH11   SEMH11






Part Number SEMH13
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Digital Transistor Array Preliminary data
Datasheet SEMH11 DatasheetSEMH13 Datasheet (PDF)

SEMH13 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =4.7kΩ, R2=47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH13 Maximum Ratings Parameter Marking WG Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 .

  SEMH11   SEMH11







Part Number SEMH10
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Digital Transistor Array Preliminary data
Datasheet SEMH11 DatasheetSEMH10 Datasheet (PDF)

SEMH10 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =2.2kΩ, R2=47kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH10 Maximum Ratings Parameter Marking WH Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 .

  SEMH11   SEMH11







Part Number SEMH1
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description NPN Silicon Digital Transistor Array Preliminary data
Datasheet SEMH11 DatasheetSEMH1 Datasheet (PDF)

SEMH1 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor (R1=22kΩ, R2 =22kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH1 Maximum Ratings Parameter Marking WD Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj T stg Value 50 5.

  SEMH11   SEMH11







NPN Silicon Digital Transistor Array Preliminary data

SEMH11 NPN Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit • Two ( galvanic) internal isolated Transistors with good matching in one package • Built in bias resistor ( R1 =10kΩ, R2 =10kΩ) C1 6 B2 5 E2 4 4 5 3 6 1 2 R2 R1 TR1 R2 1 E1 2 B1 3 C2 EHA07174 TR2 R1 Type SEMH11 Maximum Ratings Parameter Marking WC Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT666 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Value 50 50 10 20 100 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 75 °C Junction temperature Storage temperature Thermal Resistance mA mW °C Junction - soldering point 1) RthJS ≤ 300 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Feb-09-2004 SEMH11 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R2 7 0.9 10 1 13 1.1 Vi(on) 1 2.5 Vi(off) 0.8 1.5 VCEsat 0.3 .


2005-05-18 : SA52    SA52-11    SA52-11EWA    SA52-11GWA    SA52-11SRWA    SA52-11SRWAI    SA52-11YWA    SA5200    SA5204    SA5205   


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