GaAs Infrared Emitting Diode
SE3455/5455
GaAs Infrared Emitting Diode
FEATURES • TO-46 metal can package
• Choice of flat window or lensed package •...
Description
SE3455/5455
GaAs Infrared Emitting Diode
FEATURES TO-46 metal can package
Choice of flat window or lensed package 90¡ or 20¡ (nominal) beam angle option 935 nm wavelength Wide operating temperature range (- 55¡C to +125¡C) Ideal for high pulsed current applications Mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491phototransistor, SD3410/5410 photodarlington and SD5600 series Schmitt trigger
INFRA-83.TIF
DESCRIPTION The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constructed with dual bond wires suitable for pulsed current applications. The TO-46 packages offer high power dissipation capability and are ideally suited for operation in hostile environments.
OUTLINE DIMENSIONS in inches (mm) Tolerance 3 plc decimals ±0.005(0.12) 2 plc decimals ±0.020(0.51)
SE3455
.188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 1 45° .046(1.17) .036(.91) .100(2.54)DIA NOM
.048(1.22) .160 (4.06) DIA. .137 (3.48) .015 (0.36) .153 (3.89) .140 (3.56) .028(.71) .018 (.460)
2
DIA. LEADS: 1. CATHODE (TAB) 2. ANODE (CASE)
DIM_005a.ds4
SE5455
.188 (4.77) DIA. .178 (4.52) .219 (5.56) DIA. .208 (5.28) .500 (12.70) MIN. 1 45° .046(1.17) .036(.91) .100(2.54)DIA NOM
.048(1.22) .160 (4.06) DIA. .137 (3.48...
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