Green SDU/D04N65
Product
SamHop Microelectronics corp.
Ver 2.3
N-Channel Logic Level Enhancement Mode Field Effect Tr...
Green SDU/D04N65
Product
SamHop Microelectronics corp.
Ver 2.3
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
650V
4A
2.5 @VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU04N65HZ
TO-252
SDD04N65HS
TO-251S
SDD04N65HL
TO-251L
Marking Code SDU04N65 SDD04N65 SDD04N65
Delivery Mode Reel
Tube Tube
RoHS Status Halogen Free Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage VGS Gate-Source
Voltage
ID
Drain Current-Continuous a e
TC=25°C TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=100°C
TJ, TSTG
Operating Junction and Storage Temperature Range
Limit 650 ±30
4 2.8 11 100 83 42
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8 °C/W 50 °C/W
Details are subject to change without notice.
1
Jan,02,2014
www.samhop.com.tw
SDU/D04N65
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS Zero Gate
Voltage Drain Current IGSS Gate-Body Leakage...