SDU/D03N50Green
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect T...
SDU/D03N50Green
Product
Sa mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
500V
2.6A
2.0 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
D
G S
SDU SERIES TO-252(D-PAK)
G DS
SDD SERIES TO-251S(I-PAK)
G DS
SDD SERIES TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU03N50HZ
TO-252
Marking Code SDU03N50
Delivery Mode Reel
RoHS Status Halogen Free
SDD03N50HS SDD03N50HL
TO-251S TO-251L
SDD03N50 SDD03N50
Tube Tube
Halogen Free Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source
Voltage VGS Gate-Source
Voltage
ID
Drain Current-Continuous a e
TC=25°C TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C TC=100°C
Limit 500 ±30 2.6 1.64 10.4 260 45 18
Units V V A A A mJ W W
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
2.78 °C/W 50 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDU/D03N50
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS Zero Gate
Voltage Drain Current IGSS Gate-Body Leakage Cur...
