Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Revolutionary semiconductor
SDT12S...
Preliminary data Silicon Carbide Schottky Diode
Worlds first 600V Schottky diode Revolutionary semiconductor
SDT12S60
Product Summary VRRM Qc IF 600 30 12
P-TO220-2-2.
material - Silicon Carbide
Switching behavior benchmark No reverse recovery No temperature influence on
V nC A
the switching behavior
No forward recovery
Type SDT12S60
Package P-TO220-2-2.
Ordering Code Q67040-S4470
Marking D12S60
Pin 1 C
Pin 2 A
Pin 3
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz
TC=25°C, tp =10ms
Symbol IF I FRMS
Value 12 17 36 49 120 6.48 600 600 88.2 -55... +175
Unit A
Surge non repetitive forward current, sine halfwave I FSM Repetitive peak forward current
Tj=150°C, TC=100°C, D=0.1
I FRM I FMAX
i2dt
Non repetitive peak forward current
tp =10µs, TC=25°C
i 2 t value, TC=25°C, tp =10ms Repetitive peak reverse
voltage Surge peak reverse
voltage Power dissipation, TC=25°C Operating and storage temperature
A²s V W °C
VRRM VRSM Ptot T j , Tstg
Page 1
2002-01-14
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA Symbol min. Values typ.
SDT12S60
Unit max. 1.7 62 K/W
Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward
voltage
IF=12A, T j=25°C IF=12A, T j=150°C
Symbol min. VF IR -
Values typ. max.
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