Green Product
SDT02N02
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PR...
Green Product
SDT02N02
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
200V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
2A
R DS(ON) ( Ω) Typ
2.5 @ VGS=10V
R ugged and reliable. S urface Mount P ackage.
D
G G S S
SOT-223
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source
Voltage Gate-Source
Voltage Drain Current-Continuous -Pulsed
a a
Limit 200 ±30 TA=25°C TA=25°C 2 13 2.98 -55 to 175
Units V V A A W °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
42
°C/W
Details are subject to change without notice.
Jun,07,2012
1
www.samhop.com.tw
SDT02N02
Ver 1.0
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
4 Symbol
Parameter
Conditions
VGS=0V , ID=250uA VDS=160V , VGS=0V
Min
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown
Voltage BVDSS Zero Gate
Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS VGS(th) Gate Threshold
Voltage RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
b
200 1 ±100
uA nA
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA VGS=10V , ID=1A VDS=10V , ID=1A
2
3 2.5 1.8
4 3.1
V ohm S
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
b
VDS=25V,VGS=0V f=1.0MHz
240 3...