Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP04N65
SDF04N65
Ver 2.2
PRODUCT S...
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP04N65
SDF04N65
Ver 2.2
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
650V
4A
2.3 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP04N65HZ
TO-220
SDP04N65PZ
TO-220
SDF04N65HZ
TO-220F
SDF04N65PZ
TO-220F
Marking Code SDP04N65 04N65 SDF04N65 04N65
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP04N65 SDF04N65
VDS Drain-Source
Voltage VGS Gate-Source
Voltage
650 ±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
44 2.8 2.8
IDM -Pulsed a
12 12
EAS Single Pulse Avalanche Energy c
324
PD
Maximum Power Dissipation
TC=25°C TC=100°C
94 31 47 15.6
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.6 4.8 62.5 62.5
°C/W °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP04N65 SDF04N65
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS Zero Gate
Voltage Drain Current IGSS Gat...