Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP03N80
SDF03N80
Ver 1.1
PRODUCT S...
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP03N80
SDF03N80
Ver 1.1
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
800V
3.0A
3.3 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
Marking Code
Delivery Mode
RoHS Status
SDP03N80HZ
TO-220
SDP03N80
Tube
Halogen Free
SDP03N80PZ
TO-220
03N80
Tube
Pb Free
SDF03N80HZ
TO-220F
SDF03N80
Tube
Halogen Free
SDF03N80PZ
TO-220F
03N80
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP03N80 SDF03N80
VDS Drain-Source
Voltage
800
VGS Gate-Source
Voltage ID Drain Current-Continuous a
TC=25°C TC=70°C
±30 ±30 3 3e 2.5 2.5 e
IDM -Pulsed b
8.9 8.9e
EAS Single Pulse Avalanche Energy d
100
PD
a
Maximum Power Dissipation
TC=25°C TC=70°C
84 42 58 29
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a
1.8 3.6 °C/W 62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP03N80 SDF03N80
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS Zero Gate
Voltage D...