SDP02N65

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP02N65 SDF02N65 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 650V 2A 5.6 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP02N65HZ TO-220 Marking Code SDP02N65 Delivery Mode Tube RoHS Status Halogen Free SDP02N65PZ SDF02N65HZ SDF02N65PZ TO-220 TO-220F TO-220F 02N65 SDF02N65 02N65 Tube Tube Tube Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP02N65 SDF02N65 VDS Drain-Source Voltage VGS Gate-Source Voltage 650 ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 22 1.4 1.4 IDM -Pulsed a 5.9 5.9 EAS Single Pulse Avalanche Energy c 56 PD Maximum Power Dissipation TC=25°C TC=100°C 75 25 37.5 12.5 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2 6 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP02N65 SDF02N65 Ver 2.1 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-B...