SDM9433

( DataSheet : www.DataSheet4U.com ) S DM9433 S amHop Microelectronics C orp. March , 2003 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -5.4A R DS (ON) S uper high dense cell design for low R DS (ON ). 45 @ V G S = -4.5V 70 @ V G S = -2.7V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 20 12 5.4 20 2.6 2.5 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 50 C /W 1 www.DataSheet4U.com www.DataSheet4U.com S DM9433 E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = -250uA V DS = -16V, V GS = 0V V GS = 12V, V DS = 0V V DS = V GS , ID = -250uA V GS = -4.5V, ID = -5.1A V GS = -2.7V, ID = -2.0A V DS = -5V, V GS = -4.5V V DS = -15V, ID = - 5.3A Min Typ C Max Unit -20 -1 V uA 100 nA -0.7 V 45 m-ohm 70 m-ohm -20 13 1190 710 260 A S PF PF PF OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leak...