SDM4953

S DM4953 J ul 06 2005 ver1.2 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y VDS S -30V ID -4.6A R DS (ON) ( m W ) Max 53 @ VGS = -10V 95 @ VGS = - 4.5V F E AT UR E S S uper high dense cell design for low R DS(ON). R ugged and reliable. S urface Mount P ackage. D1 D1 D2 D2 87 65 S O-8 1 1234 S1 G1 S2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C -P ulsed b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TSTG Limit -30 20 -4.6 -23 1.7 2 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S DM4953 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) P a ra meter S ymbol C ondition Min Typ C Max Unit OFF CHARACTERISTICS Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30 V Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V -1 uA Gate-Body Leakage ON CHARACTERISTICS b IGSS VGS = 20V, VDS= 0V 100 nA Gate Threshold Voltage VGS(th) VDS =VGS, ID = -250uA -1 -1.5 -3 V Drain-S ource On-S tate R esistance R DS(ON) VGS =-10V, ID= -4.6A VGS =-4.5V, ID =-3.6A 43 53 m-ohm 70 95 m-ohm On-S tate Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS c ID(ON) gFS VDS = -5V, VGS = -10V VDS =-15V, ID = - 4.6A ...