SDF05N50

Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP05N50 SDF05N50 Ver 2.3 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ 500V 5A 1.35 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package. D GDS SDP SERIES TO-220 GDS SDF SERIES TO-220F G S ORDERING INFORMATION Ordering Code Package SDP05N50HZ TO-220 SDP05N50PZ TO-220 SDF05N50HZ TO-220F SDF05N50PZ TO-220F Marking Code SDP05N50 05N50 SDF05N50 05N50 Delivery Mode Tube Tube Tube Tube RoHS Status Halogen Free Pb Free Halogen Free Pb Free ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol Parameter SDP05N50 SDF05N50 VDS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ±30 ID Drain Current-Continuous a TC=25°C TC=100°C 5.0 5.0 3.5 3.5 IDM -Pulsed a 15 15 EAS Single Pulse Avalanche Energy c 40 PD Maximum Power Dissipation TC=25°C TC=100°C 83 28 42 14 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 175 Units V V A A A mJ W W °C THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 1.8 5.4 °C/W 62.5 62.5 °C/W Details are subject to change without notice. 1 Dec,24,2013 www.samhop.com.tw SDP05N50 SDF05N50 Ver 2.3 ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) 4 Symbol Parameter Conditions Min OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Ga...