Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP05N50
SDF05N50
Ver 2.3
PRODUCT S...
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP05N50
SDF05N50
Ver 2.3
PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ
500V 5A 1.35 @ VGS=10V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-220 and TO-220F Package.
D
GDS
SDP SERIES TO-220
GDS
SDF SERIES TO-220F
G S
ORDERING INFORMATION
Ordering Code
Package
SDP05N50HZ
TO-220
SDP05N50PZ
TO-220
SDF05N50HZ
TO-220F
SDF05N50PZ
TO-220F
Marking Code SDP05N50 05N50 SDF05N50 05N50
Delivery Mode Tube Tube Tube Tube
RoHS Status Halogen Free
Pb Free Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP05N50 SDF05N50
VDS Drain-Source
Voltage
500
VGS Gate-Source
Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C TC=100°C
5.0 5.0 3.5 3.5
IDM -Pulsed a
15 15
EAS Single Pulse Avalanche Energy c
40
PD
Maximum Power Dissipation
TC=25°C TC=100°C
83 28 42 14
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 to 175
Units V V A A A mJ W W
°C
THERMAL CHARACTERISTICS
R JC R JA
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
1.8 5.4 °C/W 62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP05N50 SDF05N50
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown
Voltage IDSS Zero Gate
Voltage Drain Current IGSS Ga...