SD2903

® SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs s s s s s s s s GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION The SD2903 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 500 MHz M229 (epoxy sealed) ORDER CODE BRANDING SD2903 SD2903 PIN CONNECTION 1. Drain 2. Drain 3. Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V DGR V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current Power Dissipation Max. O perating Junction Temperature Storage T emperature (RG S = 1 M Ω ) Value 65 65 ± 20 5 100 200 -65 to 150 4.Gate 5.Gate Uni t V V V A W o o C C THERMAL DATA R th (j-c) R th(c -s) Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance ∗ 1.75 0.40 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). November 1999 1/8 SD2903 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC (Per Section) Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) g FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 10V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS = 0V Parameter IDS = 15 mA VDS = 28 V V DS = 0 V ID = 30 mA ID = 1.5 A ID = 1.5 A V DS = 28 V V DS = 28 V V DS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.6 2...