SD1541-01

SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 400 (min.) DME 1025 - 1150 MHz 6.5 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFICIED OPERATING CONDITIONS INPUT/OUTPUT MATCHED, COMMON BASE CONFIGURATION .400 x .500 2LFL (M112) hermetically sealed ORDER CODE SD1541-01 BRANDING SD1541-1 PIN CONNECTION DESCRIPTION The SD1541-01 is a hermetically sealed, gold metallized, silicon NPN power transistor. The SD154101 is designed for applications requiring high peak power and low duty cycles such as DME. The SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 22 1458 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance November 1992 0.12 °C/W 1/5 SD1541-01 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO ICES hFE IC = 25mA IC = 50mA IE = 10mA VCE = 50V VCE = 5V IE = 0mA...