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SD1530-7 Datasheet

Part Number SD1530-7
Manufacturers Advanced Semiconductor
Logo Advanced Semiconductor
Description NPN SILICON RF POWER TRANSISTOR
Datasheet SD1530-7 DatasheetSD1530-7 Datasheet (PDF)

ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 2.5 A 55 V 125 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.4 C/W O 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CES BV EBO hFE PG ηC IC = 75 mA IE = 25 mA VCE = 5.0.

  SD1530-7   SD1530-7






Part Number SD1530-08
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1530-7 DatasheetSD1530-08 Datasheet (PDF)

SD1530-08 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS (typ.) IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz 9.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .250 SQ. 2LFL (M105 ) .

  SD1530-7   SD1530-7







Part Number SD1530-01
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1530-7 DatasheetSD1530-01 Datasheet (PDF)

SD1530-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS (typ.) IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz 9.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .280 4LSL (M115) epoxy.

  SD1530-7   SD1530-7







NPN SILICON RF POWER TRANSISTOR

ASI SD1530-7 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1530-7 is a Common Base Device Designed for DME, IFF and Tacan Pulse Applications. FEATURES INCLUDE: • Gold Metalization • Input Matching • Broad Band Performance PACKAGE STYLE 250 2L FLG (A) MAXIMUM RATINGS IC VCES PDISS TJ T STG θ JC 2.5 A 55 V 125 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 1.4 C/W O 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CES BV EBO hFE PG ηC IC = 75 mA IE = 25 mA VCE = 5.0 V VCC = 50 V TC = 25 OC TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 55 4.0 UNITS V V --- IC = 300 mA Pout = 25 W fo = 960 to 1215 MHz DUTY CYCLE = 1.0% 10 8.5 10 45 PULSE WIDTH = 10 µS dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 .


2005-09-14 : TB31206    TB31213FN    WD1510    LM80C24    ODM-20216    TEC3033    ETK85-050    D469A    D469A    M80056B   


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