SD1530-08
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF, DME, ...
SD1530-08
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
. . . . . . . . .
DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS (typ.) IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz 9.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION
.250 SQ. 2LFL (M105 ) hermetically sealed ORDER CODE SD1530-08 BRAND ING 1530-8
PIN CONNECTION
DESCRIPTION The SD1530-08 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-08 is packaged in the .250” input matched hermetic stripline flange package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Base
3. Emitter
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
65 65 3.5 2.6 87.5 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
August 1993
2.0
°C/W
1/5
SD1530-08
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BV CES BVEBO ICES hFE
IC = 10 mA IC = 25 mA IE ...