DatasheetsPDF.com

SD1457 Datasheet

Part Number SD1457
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1457 DatasheetSD1457 Datasheet (PDF)

SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1457 BRANDING SD1457 www.DataSheet4U.com PIN CONNECTION DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF broadcast transmitters. This device utlizes diffused emitter resistors to achieve infinite VSWR at rated operatin.

  SD1457   SD1457






Part Number SD1459
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1457 DatasheetSD1459 Datasheet (PDF)

SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS www.DataSheet4U.com P OUT = 20 W MIN. WITH 7.5 dB GAIN . . . . . . . .500 Dia .550 4L STUD (M164) epoxy sealed ORDER CODE SD1459 BRANDING SD1459 PIN CONNECTION DESCRIPTION The SD1459 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A ope.

  SD1457   SD1457







Part Number SD1458
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1457 DatasheetSD1458 Datasheet (PDF)

SD1458 RF & MICROWAVE TRANSISTORS TVLINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS IMD −55 dB COMMON EMITTER GOLD METALLIZATION INTERNAL INPUT MATCHING HIGH SATURATED POWER CAPABILITY www.DataSheet4U.com DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 14 W MIN. WITH 14.0 dB GAIN . . . . . . . . . .500 6LFL (M111) epoxy sealed ORDER CODE SD1458 BRANDING SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resisto.

  SD1457   SD1457







Part Number SD1456
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1457 DatasheetSD1456 Datasheet (PDF)

SD1456 (TCC3100) RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION www.DataSheet4U.com DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION P OUT = 100 W MIN. WITH 11.0 dB GAIN . . . . . . . . . .400 x .425 8LFL (M168) epoxy sealed ORDER CODE SD1456 BRANDING TCC3100 PIN CONNECTION DESCRIPTION The SD1456 is a gold metallized epitaxial silicon NPN pla.

  SD1457   SD1457







Part Number SD1455
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description RF & MICROWAVE TRANSISTORS
Datasheet SD1457 DatasheetSD1455 Datasheet (PDF)

SD1455 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST www.DataSheet4U.com RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 20 W MIN. WITH 8.0 dB GAIN . . . . . . . . . .500 4L STUD (M130) epoxy sealed ORDER CODE SD1455 BRANDING SD1455 PIN CONNECTION DESCRIPTION The SD1455 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter b.

  SD1457   SD1457







RF & MICROWAVE TRANSISTORS

SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P OUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL (M174) epoxy sealed ORDER CODE SD1457 BRANDING SD1457 www.DataSheet4U.com PIN CONNECTION DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF broadcast transmitters. This device utlizes diffused emitter resistors to achieve infinite VSWR at rated operating conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base 4. Emitter VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 30 60 4.0 10 100 +200 − 65 to +150 V V V V A W °C °C °C/W 1/5 THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 1.5 SD1457 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCER BVCEO BVEBO hFE DYNAMIC www.DataSheet4U.com IC = 50mA IC = 50mA IC = 50mA IE = 10mA VCE = 5V IE = 0mA RBE = 10Ω IB = 0mA IC = 0mA IC = 1A 65 60 30 4.0 20 — — — — — — — — — 150 V V V V — Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc COB f = 108 MHz f = 108 MHz f = 108 MHz f = 1 MHz PIN = 7.5 W PIN = 7.5 W PIN = 7.5 W VCB = 30 V VCE = 28 V VCE = 28 V VCE = 28 V 75 10 7.


2008-04-10 : MFQ930    MFQ960    MFQ990    FRH110-250    FRH120-250    FRH145-250    FRH180-250    FRH150-600    FRH110-250U    FRH120-250U   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)