SD13002 / SD13003
NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications.
These...
SD13002 / SD13003
NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications.
These transistors are subdivided into one group according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
TO-92L Plastic Package Weight approx. 0.38g
Absolute Maximum Ratings (T a = 25oC)
Collector Base
Voltage Collector Emitter
Voltage Emitter Base
Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
Symbol
VCBO VCEO VEBO
IC Ptot Tj Ts
Value
13002
13003
600
400
9
1 1.5
1.15
1.25
150
-55~+150
G S P FORM A IS AVAILABLE
Unit
V V V A W OC OC
РАДИОТЕХ
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
SD13002 / SD13003
Characteristics at Tamb=25 OC
DC Current Gain at VCE=10V, IC=100mA Collector Base Breakdown
Voltage at IC=1mA at IC=5mA Collector Emitter Breakdown
Voltage at IC=5mA Emitter Base B...
