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SD125SA45B

Sensitron

SILICON SCHOTTKY RECTIFIER DIE

SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4956, Rev. A SD125SA45A/B/C SILICON SCHOTTKY RECTIFIER DIE Very Low ...


Sensitron

SD125SA45B

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SENSITRON SEMICONDUCTOR Technical Data Data Sheet 4956, Rev. A SD125SA45A/B/C SILICON SCHOTTKY RECTIFIER DIE Very Low Forward Voltage Drop (150 °C TJ Operation) Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: www.DataSheet4U.com Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Electrically / Mechanically Stable during and after Packaging Maximum Ratings(1): Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave TJ = 25 °C, IAS = 2.0 A, L = 8 mH IAS decay linearly to 0 in 1 µs ƒ limited by TJ max VA=1.5VR Max. 45 15 280 16.0 3.0 -65 to +150 -65 to +150 Units V A A mJ A °C °C Electrical Characteristics(1): Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance (1) in SHD package CT Condition @ 15A, Pulse, TJ = 25 °C @ 15A, Pulse, TJ = 125 °C @VR = 45V, Pulse, TJ = 25 °C @VR = 45V, Pulse, TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz, VSIG = 50mV (p-p) Max. 0.56 0.51 1.5 70 800 U...




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