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SC8260S Datasheet

Part Number SC8260S
Manufacturers SamHop
Logo SamHop
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SC8260S DatasheetSC8260S Datasheet (PDF)

SC8260SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.5 @ VGS=4.5V 10.8 @ VGS=4.0V 20V 8A 11.8 @ VGS=3.8V 13.5 @ VGS=3.1V 16.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 S1 S2 G1 G2 S1 S2 0.65 0.65 0.65 0.65 2.55 0.03 8260S .

  SC8260S   SC8260S






Part Number SC8260
Manufacturers SamHop
Logo SamHop
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet SC8260S DatasheetSC8260 Datasheet (PDF)

Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor SC8260 Ver 6.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.5 @ VGS=4.5V 10.8 @ VGS=4.0V 20V 8A 11.8 @ VGS=3.8V 13.5 @ VGS=3.1V 16.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 2.55 0.03 8260 Date Code Mark area 1-pin index mark S1 0..

  SC8260S   SC8260S







Dual N-Channel Enhancement Mode Field Effect Transistor

SC8260SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.5 @ VGS=4.5V 10.8 @ VGS=4.0V 20V 8A 11.8 @ VGS=3.8V 13.5 @ VGS=3.1V 16.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 S1 S2 G1 G2 S1 S2 0.65 0.65 0.65 0.65 2.55 0.03 8260S Date Code Mark area 1-pin index mark S1 0.13 0.03 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 φ 0.31 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 20 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 8 80 PT Total Power Dissipation a 1.3 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Sour.


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