SC-89

Si1013R/X New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V ID (mA) –350 –300 –150 FEATURES D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching Cell Phones, Pagers SC-75A or SC-89 G 1 Ordering Information: SC-75A (SOT– 416): Si1013R–Marking Code : D SC-89 (SOT– 490): Si1013X–Marking Code: B Top View 3 D S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)b Pulsed Drain Currenta Continuous Source Current (diode conduction)b Maximum Power Dissipationb for SC-75 TA = 25_C TA = 85_C TA = 25_C for SC-89 TA = 85_C TJ, Tstg ESD PD TA = 25_C TA = 85_C ID IDM IS –275 175 90 275 160 –55 to 150 2000 Symbol VDS VGS 5 secs Steady State –20 "6 Unit V –400 –300 –1000 –350 –275 mA –250 150 80 250 140 _C V mW Maximum Power Dissipationb Operating Junction and Storage Temperature Range Gate-Source ESD Rating (HBM, Method 3015) Notes a. Pulse width limited by maximum junct...