Si1013R/X
New Product
Vishay Siliconix
P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
1.2 @ VGS = –4.5 V –20 1.6 @ VGS = –2.5 V 2.7 @ VGS = –1.8 V
ID (mA)
–350 –300 –150
FEATURES
D D D D D D High-Side Switching Low On-Resistance: 1.2 W Low Threshold: 0.8 V (typ) Fast Swtiching Speed: 14 ns 1.8-V Operation Gate-Source ESD Protection
BEN...
