SBT2907F

Semiconductor SBT2907F PNP Silicon Transistor Descriptions General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with SBT2222F Ordering Information Type NO. SBT2907F Marking 2B Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2081-001 0.9±0.1 0~0.1 1 SBT2907F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°C Symbol VCBO VCEO VEBO IC PC* Tj Tstg Ratings -60 -40 -5 -600 350 150 -55~150 Unit V V V mA mW °C °C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob ton td tr toff ts tf Test Condition IC=-10µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-40V, IE=0 VCE=-10V, IC=-10mA IC=-150mA, IB=-15mA VCE=-5.0V, IC=-20mA, f=100MHz VCB=-10V, IE=0, f=1MHz VCC=-30Vdc,IC=-150mAdc, IB1=-15mAdc Min. Typ. M...