SBT2222F

Semiconductor SBT2222F NPN Silicon Transistor Descriptions General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with SBT2907F Ordering Information Type NO. SBT2222F Marking 1B Package Code SOT-23F Outline Dimensions 2.4±0.1 1.6±0.1 unit : mm 1 2.9±0.1 1.90 BSC 3 0.4±0.05 2 0.15±0.05 PIN Connections 1. Base 2. Emitter 3. Collector KST-2079-000 0.9±0.1 0~0.1 1 SBT2222F Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature range * : Package mounted on 99.5% alumina 10×8×0.6mm Ta=25°C Symbol VCBO VCEO VEBO IC PC * Ratings 60 30 5 600 350 150 -55~150 Unit V V V mA mW °C °C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current DC current gain Collector-Emitter saturation voltage Transition frequency Collector output capacitance Delay time Rise time Storage time Fall Time Ta=25°C Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) fT Cob td tr ts tf Test Condition IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=10V, IC=10mA IC=150mA, IB=15mA VCE=20V, IC=20mA, f=100MHz VCB=10V, IE=0, f=1MHz VCC=30Vdc, VBE(off)=0.5Vdc, IC=150mAdc, IB1=15mAdc VCC=30Vdc,IC=150mAdc, IB1=IB2=15mAdc Min. Typ...