SBR10U60CT SBR10U60CTF SBR10U60CTI SBR10U60CTB
Using state-of-the-art SBR IC process technology, the following features...
SBR10U60CT SBR10U60CTF SBR10U60CTI SBR10U60CTB
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@5A, Tj=125 C Tj (operating/storage)
O
Units
A V V, typ O C
10 60 0.39 -65 to 150
Device optimized for low forward
voltage drop to maximize efficiency in Power Supply applications
ELECTRICAL: * Ultra-Low Forward
Voltage Drop * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability * 150OC Operating Junction Temperature
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MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263, and ITO-220 packages
Case Styles SBR10U60CT SBR10U60CTF SBR10U60CTI SBR10U60CTB
2
Anode
1
Common Cathode
3
Anode
Anode
1
Common Cathode
2
2 3
Anode Anode
2 3
Anode Anode
1
Common Cathode
1
Common Cathode
3
Anode
TO-220AB
ITO-220
TO-262
TO-263
________________________________________________________________________________________________ www.apdsemi.com Version 2.0 - April 2006 1
SBR10U60CT SBR10U60CTF SBR10U60CTI SBR10U60CTB
Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified)
SYMBOL DC Blocking
Voltage Working Peak Reverse
Voltage Peak Repetitive Reverse
Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-1Khz) Instantaneous ...
