SBR10U150CT SBR10U150CTF SBR10U150CTI SBR10U150CTB
Using state-of-the-art SBR IC process technology, the following feat...
SBR10U150CT SBR10U150CTF SBR10U150CTI SBR10U150CTB
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Values Characteristics
IF(AV) Rectangular Waveform VRRM VF@5A, Tj=125 C Tj (operating/storage)
O
Units
A V V, typ O C
10 150 0.60 -65 to 175
Device optimized for high temperature Power Supply applications
ELECTRICAL: * Ultra-Low Forward
Voltage Drop * Reliable High Temperature Operation * Super Barrier Design * Softest, Fast Switching Capability * 175oC Operating Junction Temperature
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MECHANICAL: * Molded Plastic TO-220AB, TO-262, TO-263, and ITO-220 packages
Case Styles SBR10U150CT SBR10U150CTF SBR10U150CTI SBR10U150CTB
Anode
1
Common Cathode
2
2
Anode
2 3
Anode Anode
3
Anode
1
Common Cathode
1
Common Cathode
3
Anode Anode
Common Cathode
2
1 TO-263
Anode
3
TO-220AB
ITO-220
TO-262
________________________________________________________________________________________________ www.apdsemi.com Version 2.0 - April 2006 1
SBR10U150CT SBR10U150CTF SBR10U150CTI SBR10U150CTB
Maximum Ratings and Electrical Characteristics (at 25OC unless otherwise specified)
SYMBOL DC Blocking
Voltage Working Peak Reverse
Voltage Peak Repetitive Reverse
Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Peak Repetitive Reverse Surge Current (2uS-1Khz) Instantaneous Forward
Voltage (pe...
